Lightweight Synchronization Algorithm with Self-Calibration for Industrial LORA Sensor Networks

Wireless sensor and actuator networks are gaining momentum in the era of Industrial Internet of Things IIoT. The usage of the close-loop data from sensors in the manufacturing chain is extending the common monitoring scenario of the Wireless Sensors Networks WSN where data were just logged. In this paper we present an accurate timing synchronization for TDMA implemented on the state of art IoT radio, such as LoRa, that is a good solution in industrial environments for its high robustness. Experimental results show how it is possible to modulate the drift correction and keep the synchronization error within the requirements

Towards a Complete Exploitation of Brewers’ Spent Grain from a Circular Economy Perspective

In the present work, brewers’ spent grain (BSG), which represents the major by-product of the brewing industry, was recovered from a regional brewery and fractionated in order to obtain a complete valorization. In particular, the whole process was divided in two main parts. A first pretreatment with hot water in an autoclave allowed the separation of a solution containing the soluble proteins and sugars, which accounted for 25% of the total starting biomass. This first step allowed the preparation of a medium that was successfully employed as a valuable growing medium for different microbial fermentations, leading to valuable fungal biomass as well as triglycerides with a high content of linear or branched fatty acids, depending on the microorganism used. The solid water-insoluble residue was then submitted to a lignocellulose deep eutectic solvent-mediated fractionation, which allowed the recovery of two important main fractions: BSG cellulose and BSG lignin. The latter product was tested as potential precursor for the development of cement water reducers with encouraging results. This combination of treatments of the waste biomass appeared to be a promising sustainable strategy for the development of the full exploitation of BSG from a circular economy perspective

First results in micromapping the sensitivity to SEE of an electronic device in a SOI technology at the LNL IEEM

In this paper we review on radiation tolerance studies on a Monolithic Pixels Detector fabricated in a commercial Silicon On Insulator (SOI) technology and we report on the first application of Ion Electron Emission Microscopy to obtain a micrometric map of its sensitivity to Single Event Upset

Performance of the SIRAD ion electron emission microscope

An axial ion electron emission microscope (IEEM) is now working at the SIRAD irradiation facility of the INFN Laboratories of Legnaro (Italy). The IEEM is used to precisely reconstruct the impact points of single ions, information that may be used to determine the areas of a microelectronic device under test that are sensitive to single event effects (SEE). After describing the setup briefly reviewing its working principles, we show our first time resolved ion induced electron emission images of standard calibration targets. We also discuss a preliminary measurement of ion impact detection efficiency of the IEEM system and the available trigger signals for SEE studies. We finally make an assessment of ion electron emission microscopy at SIRAD and indicate future developments

Investigation of Supply Current Spikes in Flash Memories Using Ion-Electron Emission Microscopy

We studied the occurrence of supply current spikes and destructive events in NAND flash memories under heavy-ion exposure. In addition to broad-beam experiments, we used collimated beams and ion-electron emission microscopy to investigate the phenomena on two types of memories with different feature size. Current spikes on the supply current were observed in both devices, also with collimated beams, whereas destructive events occurred only with broad beam. We show that current spikes do not originate from charge-pump capacitors, as previously suggested, and propose that destructive events are due to the effects of temporally close heavy-ion hits on distinct areas of the tested chips

Detection efficiency and spatial resolution of the SIRAD ion electron emission microscope

An axial ion electron emission microscope (IEEM) has been built at the SIRAD irradiation facility at the 15 MV Tandem accelerator of INFN Legnaro National Laboratory (Padova, Italy) to obtain a micrometric sensitivity map to single event effects (SEE) of electronic devices. In this contribution we report on two experiments performed with the IEEM. Si3N4 Ultra-thin membranes with a gold deposition were placed on the device under test (DUT) to ensure a uniform and abundant secondary electron emission In the first experiment we measured an IEEM ion detection efficiency of 83% with a Ni-58 (220 MeV) beam, in good agreement with the expected value. The second experiment allowed us to estimate the lateral resolution of the IEEM. The positions of ion induced single event upsets (SEU) in a synchronous dynamic random access memory (SDRAM), used as a reference target, were compared with the corresponding ion impact points reconstructed by the IEEM. The result (FWHM similar to 4.4 mu m with a Br-79 beam of 214 MeV) is encouraging because of the residual presence of distortions of the image and mechanical vibrations. (c) 2009 Elsevier B.V. All rights reserved